| PART |
Description |
Maker |
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| 2SD1000 2SD1000-T1 2SD1000-T2 2SD1000-AZ |
700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
NEC[NEC]
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
| 2SD2495 |
Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍扩散平面达林顿晶体 6 A, 110 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| BD159 BD157 BD158 BD157STU BD158STU BD159STU |
Low Power Fast Switching Output Stages
NPN Epitxial Silicon Transistor
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BDP947 BDP949 |
Silicon NPN Transistor
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SD596 2SD596-L 2SD596-T2B 2SD596DV1 2SD596DV4 2SD |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 晶体管|晶体管|叩| 25V的五（巴西）总裁| 700mA的一（c）|的SOT - 346
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC, Corp.
NEC Corp.
ETC
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
